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ELECTROCHEMICAL ETCHING INSTALLATION AND METHOD FO

时间:2022-09-08 来源:匠吉财富
专利内容由知识产权出版社提供

专利名称:ELECTROCHEMICAL ETCHING

INSTALLATION AND METHOD FORETCHING A BODY TO BE ETCHED

发明人:ARTMAN, HANS,FREY, WILHELM,LAERMER,

FRANZ

申请号:EP00922440.3申请日:20000317公开号:EP1181400B1公开日:20070228

摘要:The invention relates to an electrochemical etching cell (1) for etching a body(15) which is to be etched and which is comprised, at least superficially, of a material to beetched. Said etching cell (1) comprises at least one chamber filled with an electrolyte andis provided with a first electrode (13), said first electrode being comprised, at leastsuperficially, of a first electrode material, as well as with a second electrode (13') that iscomprised, at least superficially, of a second electrode material. In addition, the body (15)to be etched is brought, at least in areas, into contact with the electrolyte. The firstelectrode material and the second electrode material are selected such that, afteretching, the body (15) to be etched is not contaminated and/or the properties thereofare not impaired by the electrode materials. The electrode materials are, in particular,comprised of the same materials as those of the etching material. The invention alsorelates to a method for etching a body (15) to be etched while using said etching cell (1),whereby the first and/or second electrode (13, 13') is/are used as sacrificial electrodes.The inventive etching cell is especially suited for etching silicon wafers in a CMOS-

compatible production line.

申请人:ROBERT BOSCH GMBH,BOSCH GMBH ROBERT,ROBERT BOSCH GMBH

地址:DE

国籍:DE

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